Structural Defects Improve the Memristive Characteristics of Epitaxial La _0.8 Sr _0.2 MnO ₃ ‐Based Devices

Interface-type valence change memories (VCMs) are exciting candidates for multilevel storage in resistive random access (RRAM) and as artificial synapses neuromorphic computing. Several materials have been proposed VCM and, depending on the electrodes of choice, different switching mechanisms take place leading to resistance. Here, focus is La0.8Sr0.2MnO3–δ (LSM) perovskite particularly, role its nanostructure memristive device performance. The nanostructural details layers modified by growing LSM epitaxial thin films substrates, i.e., SrTiO3 (STO) LaAlO3 (LAO), metal-organic chemical vapor deposition (MOCVD). An interface-type response observed using Ti active electrode Pt inert electrode. modifications (strain dislocations) determine performance, differences cycle reproducibility capabilities modification LSM's oxygen migration properties. results show that engineering a promising approach optimizing performance devices, an which can also be extended applied other nanoionic electrochemical devices.